Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2004-09-23
2010-11-16
Zarneke, David A (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257SE21507, C257SE21511
Reexamination Certificate
active
07833896
ABSTRACT:
A method of manufacturing a semiconductor device and structure thereof. The method includes providing a workpiece, the workpiece having at least one conductive pad partially exposed through an opening in a passivation layer, the passivation layer having a top surface and the opening in the passivation layer having sidewalls. A barrier layer is formed over the at least one conductive pad, wherein the barrier layer lines the sidewalls of the opening in the passivation layer and is disposed over a top portion of the passivation layer proximate the opening. A conductive cap is formed over the barrier layer within the opening in the passivation layer, and the conductive cap is recessed to a height below the top surface of the passivation layer. The conductive cap may be used for testing with a probe or may be used for wire-bonding.
REFERENCES:
patent: 4176443 (1979-12-01), Iannuzzi et al.
patent: 5329423 (1994-07-01), Scholz
patent: 5336929 (1994-08-01), Hayashi
patent: 5384284 (1995-01-01), Doan et al.
patent: 5470789 (1995-11-01), Misawa
patent: 5785236 (1998-07-01), Cheung et al.
patent: 5930664 (1999-07-01), Hsu et al.
patent: 6114243 (2000-09-01), Gupta et al.
patent: 6157078 (2000-12-01), Lansford
patent: 6171960 (2001-01-01), Lee
patent: 6191023 (2001-02-01), Chen
patent: 6229220 (2001-05-01), Saitoh et al.
patent: 6251774 (2001-06-01), Harada et al.
patent: 6274499 (2001-08-01), Gupta et al.
patent: 6329722 (2001-12-01), Shih et al.
patent: 6362531 (2002-03-01), Stamper et al.
patent: 6373137 (2002-04-01), McTeer
patent: 6376353 (2002-04-01), Zhou et al.
patent: 6378759 (2002-04-01), Ho et al.
patent: 6383917 (2002-05-01), Cox
patent: 6417088 (2002-07-01), Ho et al.
patent: 6420254 (2002-07-01), Stamper et al.
patent: 6423625 (2002-07-01), Jang et al.
patent: 6451681 (2002-09-01), Greer
patent: 6457234 (2002-10-01), Edelstein et al.
patent: 6472304 (2002-10-01), Chittipeddi et al.
patent: 6537912 (2003-03-01), Agarwal
patent: 6614091 (2003-09-01), Downey et al.
patent: 6642623 (2003-11-01), McTeer
patent: 6650021 (2003-11-01), Stamper et al.
patent: 6705512 (2004-03-01), Ho et al.
patent: 6706625 (2004-03-01), Sudijono et al.
patent: 6709965 (2004-03-01), Chen et al.
patent: 6710460 (2004-03-01), Morozumi
patent: 6774027 (2004-08-01), Kobayashi
patent: 6794248 (2004-09-01), Hashimoto et al.
patent: 6800555 (2004-10-01), Test et al.
patent: 6806578 (2004-10-01), Howell et al.
patent: 6881664 (2005-04-01), Catabay et al.
patent: 6987057 (2006-01-01), Lee et al.
patent: 7098126 (2006-08-01), Hsieh et al.
patent: 7129132 (2006-10-01), Tanaka et al.
patent: 7242097 (2007-07-01), Hua
patent: 7345358 (2008-03-01), Akram
patent: 2003/0173667 (2003-09-01), Yong et al.
patent: 2005/0074959 (2005-04-01), Burrell et al.
patent: 2005/0206007 (2005-09-01), Li et al.
Lee Chien-Hsiun
Wang Chung Yu
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
Zarneke David A
LandOfFree
Aluminum cap for reducing scratch and wire-bond bridging of... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Aluminum cap for reducing scratch and wire-bond bridging of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Aluminum cap for reducing scratch and wire-bond bridging of... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4231395