Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-12-12
2010-02-23
Sefer, A. (Department: 2893)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S612000, C438S613000, C438S615000, C257SE21508
Reexamination Certificate
active
07666780
ABSTRACT:
A method is provided for the making of interconnect solder bumps on a wafer or other electronic device. The method is particularly useful for the well-known C4NP interconnect technology and determines if any off-set resulted between the solder mold array and the wafer capture array during the transfer process. The amount of off-set enables the operator to adjust the transfer tool before solder transfer to compensate for the off-set caused by the transfer process and provides a more cost-effective and efficient solder transfer process. A solder reactive material surrounding the capture pads is used to determine where the solder reacts with the solder reactive material showing the off-set resulting from the transfer process. Copper is a preferred solder reactive material.
REFERENCES:
patent: 4950623 (1990-08-01), Dishon
patent: 6332569 (2001-12-01), Cordes et al.
patent: 6940168 (2005-09-01), Garrity et al.
patent: 7219286 (2007-05-01), Morgan
patent: 7239371 (2007-07-01), Liegl et al.
Gorrell Jerry A.
Knickerbocker Sarah H.
Reddy Srinivasa S. N.
DeLio & Peterson LLC
International Business Machines - Corporation
Khan Farid
Nowak Kelly M.
Petrokaitis Joseph
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