Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2006-05-31
2009-08-04
Kebede, Brook (Department: 2894)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C257SE21006, C427S249190
Reexamination Certificate
active
07569501
ABSTRACT:
Embodiments of the invention provide methods for forming hafnium materials, such as oxides and nitrides, by sequentially exposing a substrate to hafnium precursors and active oxygen or nitrogen species (e.g., ozone, oxygen radicals, or nitrogen radicals). The deposited hafnium materials have significantly improved uniformity when deposited by these atomic layer deposition (ALD) processes. In one embodiment, an ALD chamber contains an expanding channel having a bottom surface that is sized and shaped to substantially cover a substrate positioned on a substrate pedestal. During an ALD process for forming hafnium materials, process gases form a vortex flow pattern while passing through the expanding channel and sweep across the substrate surface. The substrate is sequentially exposed to chemical precursors that are pulsed into the process chamber having the vortex flow.
REFERENCES:
patent: 3427514 (1969-02-01), Olmstead et al.
patent: 3594295 (1971-07-01), Meckel et al.
patent: 4043848 (1977-08-01), Bazin
patent: 4096509 (1978-06-01), Blaha et al.
patent: 4262631 (1981-04-01), Kubacki
patent: 4310380 (1982-01-01), Flamm et al.
patent: 4335391 (1982-06-01), Morris
patent: 4412119 (1983-10-01), Komatsu et al.
patent: 4439463 (1984-03-01), Miller
patent: 4459739 (1984-07-01), Shepherd et al.
patent: 4495219 (1985-01-01), Kato et al.
patent: 4534826 (1985-08-01), Goth et al.
patent: 4545112 (1985-10-01), Holmberg et al.
patent: 4563367 (1986-01-01), Sherman
patent: 4585516 (1986-04-01), Corn et al.
patent: 4605947 (1986-08-01), Price et al.
patent: 4608063 (1986-08-01), Kurokawa
patent: 4651185 (1987-03-01), Holmberg et al.
patent: 4700458 (1987-10-01), Suzuki et al.
patent: 4725560 (1988-02-01), Abernathey et al.
patent: 4743953 (1988-05-01), Toyokura et al.
patent: 4745082 (1988-05-01), Kwok
patent: 4851370 (1989-07-01), Doklan et al.
patent: 4913929 (1990-04-01), Moslehi et al.
patent: 4948458 (1990-08-01), Ogle
patent: 4980307 (1990-12-01), Ito et al.
patent: 5000113 (1991-03-01), Wang et al.
patent: 5063431 (1991-11-01), Ohshima
patent: 5173442 (1992-12-01), Carey
patent: 5228950 (1993-07-01), Webb et al.
patent: 5292673 (1994-03-01), Shinriki et al.
patent: 5302236 (1994-04-01), Tahara et al.
patent: 5314724 (1994-05-01), Tsukune et al.
patent: 5335138 (1994-08-01), Sandhu et al.
patent: 5391510 (1995-02-01), Hsu et al.
patent: 5464783 (1995-11-01), Kim et al.
patent: 5582866 (1996-12-01), White
patent: 5619051 (1997-04-01), Endo
patent: 5726087 (1998-03-01), Tseng et al.
patent: 5763922 (1998-06-01), Chau
patent: 5834343 (1998-11-01), Ogasawara et al.
patent: 5840626 (1998-11-01), Ohguro
patent: 5851602 (1998-12-01), Law et al.
patent: 5861197 (1999-01-01), Law et al.
patent: 5865896 (1999-02-01), Nowak et al.
patent: 5874766 (1999-02-01), Hori
patent: 5880508 (1999-03-01), Wu
patent: 5891798 (1999-04-01), Doyle et al.
patent: 5928732 (1999-07-01), Law et al.
patent: 5935373 (1999-08-01), Koshimizu
patent: 5937303 (1999-08-01), Gardner et al.
patent: 5960270 (1999-09-01), Misra et al.
patent: 5976993 (1999-11-01), Ravi et al.
patent: 6008095 (1999-12-01), Gardner et al.
patent: 6020024 (2000-02-01), Maiti et al.
patent: 6023613 (2000-02-01), Kanehara
patent: 6027961 (2000-02-01), Maiti et al.
patent: 6033963 (2000-03-01), Huang et al.
patent: 6041734 (2000-03-01), Raoux et al.
patent: 6043157 (2000-03-01), Gardner et al.
patent: 6049114 (2000-04-01), Maiti et al.
patent: 6054013 (2000-04-01), Collins et al.
patent: 6063704 (2000-05-01), Demirlioglu
patent: 6066533 (2000-05-01), Yu
patent: 6077403 (2000-06-01), Kobayashi et al.
patent: 6082375 (2000-07-01), Gealy et al.
patent: 6083836 (2000-07-01), Rodder
patent: 6087231 (2000-07-01), Xiang et al.
patent: 6090653 (2000-07-01), Wu
patent: 6093590 (2000-07-01), Lou
patent: 6110287 (2000-08-01), Arai et al.
patent: 6117279 (2000-09-01), Smolanoff et al.
patent: 6130123 (2000-10-01), Liang et al.
patent: 6136654 (2000-10-01), Kraft et al.
patent: 6140024 (2000-10-01), Misium et al.
patent: 6140688 (2000-10-01), Gardner et al.
patent: 6162709 (2000-12-01), Raoux et al.
patent: 6171900 (2001-01-01), Sun
patent: 6171910 (2001-01-01), Hobbs et al.
patent: 6184072 (2001-02-01), Kaushik et al.
patent: 6184114 (2001-02-01), Lukanc
patent: 6190513 (2001-02-01), Forster et al.
patent: 6207304 (2001-03-01), Law et al.
patent: 6228229 (2001-05-01), Raaijmakers et al.
patent: 6235650 (2001-05-01), Yao
patent: 6244211 (2001-06-01), Nishikawa et al.
patent: 6254738 (2001-07-01), Stimson et al.
patent: 6254746 (2001-07-01), Subramani et al.
patent: 6255231 (2001-07-01), Chen et al.
patent: 6255698 (2001-07-01), Gardner et al.
patent: 6258675 (2001-07-01), Gardner et al.
patent: 6264812 (2001-07-01), Raaijmakers et al.
patent: 6277253 (2001-08-01), Narasimhan et al.
patent: 6287635 (2001-09-01), Cook et al.
patent: 6291282 (2001-09-01), Wilk et al.
patent: 6297107 (2001-10-01), Paton et al.
patent: 6297595 (2001-10-01), Stimson et al.
patent: 6303481 (2001-10-01), Park
patent: 6306216 (2001-10-01), Kim et al.
patent: 6320238 (2001-11-01), Kizilyalli et al.
patent: 6344419 (2002-02-01), Forster et al.
patent: 6345588 (2002-02-01), Stimson
patent: 6346465 (2002-02-01), Miura et al.
patent: 6348126 (2002-02-01), Hanawa et al.
patent: 6352594 (2002-03-01), Cook et al.
patent: 6354593 (2002-03-01), Frommer et al.
patent: 6355108 (2002-03-01), Won et al.
patent: 6358810 (2002-03-01), Dornfest et al.
patent: 6361667 (2002-03-01), Kobayashi et al.
patent: 6365450 (2002-04-01), Kim
patent: 6365518 (2002-04-01), Lee et al.
patent: 6373111 (2002-04-01), Zheng et al.
patent: 6376807 (2002-04-01), Hong et al.
patent: 6399520 (2002-06-01), Kawakami et al.
patent: 6413382 (2002-07-01), Wang et al.
patent: 6436801 (2002-08-01), Wilk et al.
patent: 6444099 (2002-09-01), Sasaki et al.
patent: 6444592 (2002-09-01), Ballantine et al.
patent: 6447636 (2002-09-01), Qian et al.
patent: 6448166 (2002-09-01), Cho et al.
patent: 6461483 (2002-10-01), Gopalraja et al.
patent: 6472337 (2002-10-01), Zhuang et al.
patent: 6475854 (2002-11-01), Narwankar et al.
patent: 6475908 (2002-11-01), Lin et al.
patent: 6477980 (2002-11-01), White et al.
patent: 6482752 (2002-11-01), Yamazaki et al.
patent: 6486080 (2002-11-01), Chooi et al.
patent: 6497796 (2002-12-01), Ashtiani et al.
patent: 6500742 (2002-12-01), Chern et al.
patent: 6504214 (2003-01-01), Yu et al.
patent: 6506287 (2003-01-01), Ding
patent: 6506676 (2003-01-01), Park et al.
patent: 6511875 (2003-01-01), Park et al.
patent: 6514828 (2003-02-01), Ahn et al.
patent: 6524967 (2003-02-01), Alluri
patent: 6528856 (2003-03-01), Bai et al.
patent: 6528858 (2003-03-01), Yu et al.
patent: 6541079 (2003-04-01), Bojarczuk, Jr. et al.
patent: 6544906 (2003-04-01), Rotondaro et al.
patent: 6548366 (2003-04-01), Niimi et al.
patent: 6548368 (2003-04-01), Narwankar et al.
patent: 6551446 (2003-04-01), Hanawa et al.
patent: 6554979 (2003-04-01), Stimson
patent: 6610374 (2003-08-01), Tsai et al.
patent: 6610615 (2003-08-01), McFadden et al.
patent: 6617209 (2003-09-01), Chau et al.
patent: 6617266 (2003-09-01), Nickles et al.
patent: 6620670 (2003-09-01), Song et al.
patent: 6632747 (2003-10-01), Niimi et al.
patent: 6638877 (2003-10-01), Rotondaro
patent: 6641703 (2003-11-01), Nomura et al.
patent: 6649538 (2003-11-01), Cheng et al.
patent: 6652924 (2003-11-01), Sherman
patent: 6653698 (2003-11-01), Lee et al.
patent: 6660134 (2003-12-01), Gopalraja et al.
patent: 6660659 (2003-12-01), Kraus et al.
patent: 6661058 (2003-12-01), Ahn et al.
patent: 6664160 (2003-12-01), Park et al.
patent: 6673724 (2004-01-01), Forster et al.
patent: 6675816 (2004-01-01), Ichijo
patent: 6677254 (2004-01-01), Narwankar et al.
patent: 6682973 (2004-01-01), Paton et al.
patent: 6689646 (2004-02-01), Joshi et al.
patent: 6719883 (2004-04-01), Stimson
patent: 6743473 (2004-06-01), Parkhe et al.
patent: 6759286 (2004-07-01), Kumar et al.
patent: 6765178 (2004-07-01), Shang et al.
patent: 6767824 (2004-07-01), Nallan et al.
patent: 6777346 (2004-08-01), Iyer
patent: 6780720 (2004-08-01), Burnham et al.
patent: 6784033 (2004-08-01), Yamazaki
patent: 6790755 (2
Athreya Shankarram A.
Gopal Vidyut
Han Shixue
Kher Shreyas S.
Metzner Craig R.
Applied Materials Inc.
Kebede Brook
Patterson & Sheridan LLP
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