Method of plasma doping

Details Method of plasma doping Method of plasma doping

2006-10-25

2009-08-18

Smith, Bradley K (Department: 2894)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Plasma

C438S510000

Reexamination Certificate

active

07575987

ABSTRACT:
A doping device is provided having a vacuum container defining a chamber therein. The container has a portion made of dielectric material and bears an impurity to be doped in a substrate provided in the chamber. Also provided is a plasma source for generating a plasma in the chamber by forming an electric field through the portion of the container, such that ion in the plasma impinges against the portion of the container, feeding the impurity out of the portion of the container into the chamber.

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