Advanced trench sidewall oxide for shallow trench technology

Details Advanced trench sidewall oxide for shallow trench technology Advanced trench sidewall oxide for shallow trench technology

1998-09-30

2000-11-28

Mulpuri, Savitri

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438424, 438435, H01L 21336, H01L 2176

Patent

active

061534803

ABSTRACT:
A method of forming an isolation structure in a semiconductor substrate is described. A trench is first etched into a semiconductor substrate. The trench is subjected to a nitrogen-oxide gas ambient and is annealed to form a silicon-oxynitride surface along the trench sidewalls. A first oxide layer is then formed within the trench. The first oxide layer is subjected to a nitridation step and is annealed to form an oxy-nitride surface on the first oxide layer and a silicon-oxynitride interface between the first oxide layer and the semiconductor substrate. A second oxide layer is then deposited over the oxy-nitride surface of the first oxide layer. The method and isolation structure of the present invention reduce dopant outdiffusion, reduce trench stresses, allow more uniform growth of thin gate oxides, and permit the use of thinner gate oxides.

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