Method for interconnecting layers in a semiconductor device usin

Details Method for interconnecting layers in a semiconductor device usin Method for interconnecting layers in a semiconductor device usin

1991-12-06

1993-08-10

Thomas, Tom

Fishing, trapping, and vermin destroying

156646, 148DIG131, H01L 2144, H01L 21306

Patent

active

052348644

ABSTRACT:
A method for interconnecting layers in a semiconductor device is disclosed. The device includes a lower conductive layer formed by capping a second conductive layer on a first conductive layer, a contact window formed in an inter-insulating layer on the lower conductive layer, and an upper conductive layer connected to the lower conductive layer through the contact window. The contact window is formed by removing a portion of the inter-insulating layer where the contact will be formed using a first etching gas, and removing a portion of the second conductive layer where the contact will be formed using a second etching gas. The contact resistance becomes uniform by preventing the formation of a non-volatile mixture in the contact window, and the reliability of the device is improved by planarizing the surface of the lower conductive layer.

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patent: 4742026 (1988-05-01), Vatus et al.
patent: 4981550 (1991-01-01), Huttemann et al.
patent: 5082801 (1992-01-01), Nagata

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