Advanced damascene planar stack capacitor fabrication method

Details Advanced damascene planar stack capacitor fabrication method Advanced damascene planar stack capacitor fabrication method

1997-11-20

2000-02-22

Chang, Joni

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

H01L 218242

Patent

active

060279680

ABSTRACT:
Capacitor storage charge can be increased by increasing storage node area. A high aspect surface ratio stack capacitor is produced without increasing overall cell dimensions. The node is formed with layers of low doped and high doped concentration borophosphosilicate glass which is deposited by a single process step with precise nanometer dimensions, are selectively etched so that either doped or undoped layers will have a higher etch rate. This etching creates finger-like projections in the node, which provide for greater surface area using a very simplified process requiring fewer processing steps.

REFERENCES:
patent: 5153813 (1992-10-01), Oehrlein et al.
patent: 5155657 (1992-10-01), Oehrlein et al.
patent: 5160987 (1992-11-01), Pricer et al.
patent: 5170233 (1992-12-01), Liu et al.
patent: 5223729 (1993-06-01), Kudoh et al.
patent: 5240871 (1993-08-01), Doan et al
patent: 5262662 (1993-11-01), Gonzalez et al.
patent: 5376233 (1994-12-01), Man
patent: 5409856 (1995-04-01), Jun
patent: 5436186 (1995-07-01), Hsue et al.
patent: 5460999 (1995-10-01), Hong et al.
patent: 5656536 (1997-08-01), Wu
C. Koburger, III, et al.; A Half-Micron MOS Logic Generation; IBM J. Res. Develop., vol. 39, No. 1/2; Jan./Mar. 1995; pp. 215-227.
E. Adler, et al.; The Evolution of IBM CMOS DRAM Technology; IBM J. Res. Develop., vol. 39 No. 1/2; Jan./Mar., 1995; pp. 167-187.

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