Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-06-12
2007-06-12
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S628000, C438S629000, C438S630000, C438S634000, C438S649000, C438S687000, C438S798000, C257SE21081
Reexamination Certificate
active
10929884
ABSTRACT:
Methods are provided for processing a substrate for depositing an adhesion layer between a conductive material and a dielectric layer. In one aspect, the invention provides a method for processing a substrate including positioning a substrate having a conductive material disposed thereon, introducing a reducing compound or a silicon based compound, exposing the conductive material to the reducing compound or the silicon based compound, and depositing a silicon carbide layer without breaking vacuum.
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Cui Zhenjiang
Lakshmanan Annamalai
Lee Albert
Rajagopalan Nagarajan
Shek Mei-yee
Applied Materials Inc.
Fourson George
Maldonado Julio J.
Patterson and Sheridan
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