Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-09-19
2006-09-19
Lee, Hsien-Ming (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C483S064000, C483S064000, C483S064000
Reexamination Certificate
active
07109087
ABSTRACT:
A method of processing a substrate comprising depositing a layer comprising amorphous carbon on the substrate and then laser annealing the substrate is provided. Optionally, the layer further comprises a dopant selected from the group consisting of nitrogen, boron, phosphorus, fluorine, and combinations thereof. In one aspect, the layer comprising amorphous carbon is an anti-reflective coating and an absorber layer that absorbs electromagnetic radiation emitted by the laser and anneals a top surface layer of the substrate.
REFERENCES:
patent: 5000113 (1991-03-01), Wang et al.
patent: 5559367 (1996-09-01), Cohen et al.
patent: 5569501 (1996-10-01), Bailey et al.
patent: 5599590 (1997-02-01), Hayashi et al.
patent: 5744375 (1998-04-01), Kao et al.
patent: 6303476 (2001-10-01), Hawryluk et al.
patent: 6475888 (2002-11-01), Sohn
patent: 6479821 (2002-11-01), Hawryluk et al.
patent: 6495390 (2002-12-01), Hawryluk et al.
patent: 6559017 (2003-05-01), Brown et al.
patent: 6573030 (2003-06-01), Fairbairn et al.
patent: 6650480 (2003-11-01), Tanaka
patent: 2002/0139975 (2002-10-01), Lewis et al.
patent: 2003/0148594 (2003-08-01), Yamazaki et al.
patent: 2003/0196995 (2003-10-01), Jennings
patent: 2003/0201466 (2003-10-01), Ogawa et al.
patent: 2004/0115935 (2004-06-01), Liu
patent: 2005/0056940 (2005-03-01), Sandhu et al.
patent: 375093 (2003-03-01), None
Article by Valentini et al., “Effect fo thermal annealing on the electronic properties of nitrogen doped amorphous carbon/p-type crystalline silicon heterojunction diodes”, American Vacuum Society, 2003, pp. 582-588.
Article by Barradas et al., “Growth and characterization of amorphous carbon films doped with nitrogen”, Nuclear Instruments and Methods in Physics Research B, 161-163 (2000) pp. 969-974.
Article by Kuo et al., “Field emission studies of low-temperature thermal annealing of nitrogen-doped hydrogenated amorphous carbon (a-C:H:N) films”, Diamond and Related Materials 10 (2001) pp. 889-894.
Article by Zhang et al., “Raman analysis of laser annealed nitrogen doped amorphous carbon film”, Solid State Communications 123 (2002) pp. 97-100.
PCT International Search Report from International Application No. PCT/US 2004/032151, dated Feb. 14, 2005.
Autryve Luc Van
Bencher Chris D.
Brough Richard A.
Jennings Dean
Liang Haifan
Lee Hsien-Ming
Patterson & Sheridan LLP
LandOfFree
Absorber layer for DSA processing does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Absorber layer for DSA processing, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Absorber layer for DSA processing will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3534703