Absorber layer candidates and techniques for application

Details Absorber layer candidates and techniques for application Absorber layer candidates and techniques for application

2011-01-11

2011-01-11

Pham, Thanh V (Department: 2894)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S528000, C438S535000, C438S676000

Reexamination Certificate

active

07867868

ABSTRACT:
The present invention generally provides an absorber layer using carbon based materials with increased and stabled thermal absorption coefficient and economical methods to produce such an absorber layer. One embodiment of the present invention provides a method for processing a substrate comprising depositing an absorber layer on a top surface of the substrate, wherein the substrate is maintained under a first temperature, annealing the substrate in a thermal processing chamber, wherein the substrate is heated to a second temperature, and the second temperature is higher than the first temperature, and removing the absorber layer from the substrate.

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First Office Action dated Sep. 18, 2009 for Chinese Application No. 200810006378.7.

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