4. Single-crystal, oriented-crystal, and epitaxy growth processes;
  5. Inorganic containing single-crystal (e.g., compound, mixture, co
  6. Nitride containing (e.g., gan, cbn) {c30b 29/38}
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Fabrication method of gallium manganese nitride single...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Inorganic containing single-crystal (e.g. – compound – mixture – co – Nitride containing (e.g. – gan – cbn) {c30b 29/38}
Reexamination Certificate

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Group III nitride semiconductor substrate

Single-crystal – oriented-crystal – and epitaxy growth processes; – Inorganic containing single-crystal (e.g. – compound – mixture – co – Nitride containing (e.g. – gan – cbn) {c30b 29/38}
Reexamination Certificate

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Group III nitride semiconductor substrate

Single-crystal – oriented-crystal – and epitaxy growth processes; – Inorganic containing single-crystal (e.g. – compound – mixture – co – Nitride containing (e.g. – gan – cbn) {c30b 29/38}
Reexamination Certificate

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Low temperature method of preparing GaN single crystals

Single-crystal – oriented-crystal – and epitaxy growth processes; – Inorganic containing single-crystal (e.g. – compound – mixture – co – Nitride containing (e.g. – gan – cbn) {c30b 29/38}
Patent

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