Low temperature method of preparing GaN single crystals

Details Low temperature method of preparing GaN single crystals Low temperature method of preparing GaN single crystals

1998-01-13

1999-02-09

Utech, Benjamin

Single-crystal, oriented-crystal, and epitaxy growth processes;

Inorganic containing single-crystal (e.g., compound, mixture, co

Nitride containing (e.g., gan, cbn) {c30b 29/38}

C30B 2938

Patent

active

058688374

ABSTRACT:
A low temperature method for preparing GaN single crystals for use, for example, for blue light emitting diodes and laser diodes, comprises using sodium as a flux in a reaction system containing only gallium, sodium and nitrogen, e.g., by thermally decomposing sodium azide in a closed reaction zone containing gallium or by reacting gallium with nitrogen supplied from a tank in a closed reaction zone containing sodium, optionally in the presence of a catalytic amount of an alkaline earth metal.

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