Single-crystal – oriented-crystal – and epitaxy growth processes; – Inorganic containing single-crystal (e.g. – compound – mixture – co – Nitride containing (e.g. – gan – cbn) {c30b 29/38}
Reexamination Certificate
2005-12-22
2009-08-18
Langel, Wayne (Department: 1793)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Inorganic containing single-crystal (e.g., compound, mixture, co
Nitride containing (e.g., gan, cbn) {c30b 29/38}
C423S409000
Reexamination Certificate
active
07575631
ABSTRACT:
The present invention relates to a fabrication method of gallium manganese nitride (GaMnN) single crystal nanowire, more particularly to a fabrication method of GaMnN single crystal nanowire substrate by halide vapor phase epitaxy (HVPE) in which such metal components as gallium (Ga) and manganese (Mn) react with such gas components as nitrogen (N2), hydrogen chloride (HCl) and ammonia (NH3), wherein the amount of the gas components are adjusted to control the Mn doping concentration in order to obtain nanowire having a perfect, one-dimensional, single crystal structure without internal defect, concentration of holes, or carriers, and magnetization value of which being determined by the doping concentration and showing ferromagnetism at room temperature, thus being a useful spin transporter in the field of the next-generation spintronics, such as spin-polarized LED, spin-polarized FET, etc.
REFERENCES:
patent: 4144116 (1979-03-01), Jacob et al.
patent: 5021134 (1991-06-01), Blackburn et al.
patent: 6656615 (2003-12-01), Dwilinski et al.
patent: 2003/0136986 (2003-07-01), ElMasry et al.
patent: 2005/0009310 (2005-01-01), Vaudo et al.
patent: 2005/0048686 (2005-03-01), Kitaoka et al.
patent: WO 03/078701 (2003-09-01), None
Tomasz Szyszko et al, “Preparation of Ga 1−x Mnx N bulk single crystals with c-axis parallel to dominant plane of platelets” Journal of Crystal Growth 276 (2005) 419-423.
Doo Suk Han et al, “Ferromagnetic Mn-doped GaN nanowires”, Applied Physics Letters 86, 032506 (2005).
Kim et al., “Growth of GaN Nanorods by a Hydride Vapor Phase Epitaxy Method”, Advanced Materials, 14, No. 13-14, pp. 991-993, (2002).
Molnar et al., “Growth of Gallium Nitride by Hydride Vapor-Phase Epitaxy”, Journal of Crystal Growth, 178, pp. 147-156, (1997).
He et al., “Growth of GaN Nanowires by Direct Reaction of Ga with NH3”, Journal of Crystal Growth, 231, pp. 357-365, (2001).
Sonoda et al., “Molecular Beam Epitaxy of Wurtzite (Ga,Mn)N Films on Sapphire(0 0 0 1) Showing the Ferromagnetic Behaviour at Room Temperature”, 237-239, pp. 1358-1362, (2002).
Pearton et al., “Advances in Wide Bandgap Materials for Semiconductor Spintronics”, Materials Science and Engineering, R 40, pp. 137-168, (2003).
Johnson et al., “Single Gallium Nitride Nanowire Lasers”, Nature Materials, vol. 1, pp. 106-110, (2002).
Sanyal et al., “Electronic Structure and Magnetism of Mn-Doped GaN”, Physical Review B, vol. 68, pp. 205210-205211 to 205210-205217, (2003).
Byeun Yun-Ki
Choi Heon Jin
Choi Sung Churl
Han Kyong Sop
Seong Han Kyu
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Korea Institute of Science and Technology
Langel Wayne
LandOfFree
Fabrication method of gallium manganese nitride single... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Fabrication method of gallium manganese nitride single..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fabrication method of gallium manganese nitride single... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4105521