4. Single-crystal, oriented-crystal, and epitaxy growth processes;
  5. Forming from vapor or gaseous state
  6. With movement of substrate or vapor or gas supply means...
  Search
Selected: All
All
A B C D E F G H I J K L M N O P Q R S T U V W X Y Z 0 1 2 3 4 5 6 7 8 9 ! " $ ' ( ) * , - / : < = > ? @ [ \ ] ^ ` { | } ~ €

Atomic layer deposition systems and methods

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With movement of substrate or vapor or gas supply means...
Reexamination Certificate

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Laser annealing apparatus

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With movement of substrate or vapor or gas supply means...
Reexamination Certificate

  [ 0.00 ] – not rated yet Voters 0   Comments 0

MBE system and semiconductor device fabricated, using same

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With movement of substrate or vapor or gas supply means...
Patent

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Method and apparatus for growing silicon carbide crystals

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With movement of substrate or vapor or gas supply means...
Reexamination Certificate

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Method and system for providing a thin film with a...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With movement of substrate or vapor or gas supply means...
Reexamination Certificate

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Method and system for providing a thin film with a...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With movement of substrate or vapor or gas supply means...
Reexamination Certificate

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Method of producing silicon carbide single crystal

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With movement of substrate or vapor or gas supply means...
Patent

  [ 0.00 ] – not rated yet Voters 0   Comments 0
  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.

Canada

 Charities
 Companies
 MP Candidates
 Patents
 Employee Salary Disclosure

World

 Places of the World
 Scientific Papers

United States

 Banks
 Companies
 Counties
 Patents
 Employee Salary Disclosure