Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With movement of substrate or vapor or gas supply means...
Patent
1995-09-13
1999-11-23
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With movement of substrate or vapor or gas supply means...
117108, 117956, 438286, 438289, C30B 2302, C30B 2948
Patent
active
059893397
ABSTRACT:
A molecular beam epitaxy system having a plurality of chambers which contain at least a first chamber and a second chamber. The first chamber is used to form II-VI column compound semiconductor layers not containing Te. The second chamber is used to form II-VI column compound semiconductor layers containing at least Te. A semiconductor device having an ohmic characteristics can be fabricated without mixing Te into other layers.
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Ikeda Masao
Tamamura Koshi
Tsukamoto Hironori
Kunemund Robert
Sony Corporation
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