Atomic layer deposition systems and methods

Details Atomic layer deposition systems and methods Atomic layer deposition systems and methods

2005-06-07

2005-06-07

Norton, Nadine G. (Department: 1765)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With movement of substrate or vapor or gas supply means...

C117S084000, C117S088000, C117S089000, C117S092000, C117S093000, C117S098000, C117S102000, C117S103000, C117S105000, C117S108000

Reexamination Certificate

active

06902620

ABSTRACT:
Atomic layer deposition systems and methods are disclosed utilizing a multi-wafer sequential processing chamber. The process gases are sequentially rotated among the wafer stations to deposit a portion of a total deposition thickness on each wafer at each station. A rapid rotary switching of the process gases eliminates having to divert the process gases to a system vent and provides for atomic layer film growth sufficient for high-volume production applications. Conventional chemical vapor deposition can also be performed concurrently with atomic layer deposition within the multi-wafer sequential processing chamber.

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