GaAs MESFET having LDD and non-uniform P-well doping profiles
Gallium antimonide complementary HFET
Gap capacitors for monitoring stress in solder balls in flip...
Gate electrode formation in double-recessed transistor by...
Gate-controlled, graded-extension device for deep sub-micron...
Germanium on glass and glass-ceramic structures
Glyphosate-tolerant 5-enolpyruvylshikimate-3-phosphate synthases
Group III-V devices with multiple spacer layers