Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having schottky gate
Reexamination Certificate
2011-05-10
2011-05-10
Tran, Long K (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having schottky gate
C438S190000, C438S210000, C438S238000, C438S239000, C438S386000, C438S399000, C438S957000, C257SE21008, C257SE21017
Reexamination Certificate
active
07939390
ABSTRACT:
A semiconductor structure formation method and operation method. The structure includes (i) a dielectric layer, (ii) a bottom capacitor plate and an electrically conductive line on the dielectric layer, (iii) a top capacitor plate on top of the bottom capacitor plate, (iv) a gap region, and (v) a solder ball on the dielectric layer. The dielectric layer includes a top surface that defines a reference direction perpendicular to the top surface. The top capacitor plate overlaps the bottom capacitor plate in the reference direction. The gap region is sandwiched between the bottom capacitor plate and the top capacitor plate. The gap region does not include any liquid or solid material. The solder ball is electrically connected to the electrically conductive line. The top capacitor plate is disposed between the dielectric layer and the solder ball.
REFERENCES:
patent: 3451030 (1969-06-01), Garfinkel
patent: 5808853 (1998-09-01), Dalal et al.
patent: 6744335 (2004-06-01), Ryhänen et al.
patent: 6898070 (2005-05-01), Korony et al.
patent: 2006/0205106 (2006-09-01), Fukuda et al.
patent: 2007/0062299 (2007-03-01), Mian et al.
patent: 2007/0145523 (2007-06-01), Chow et al.
patent: 2007/0172975 (2007-07-01), Tomomatsu et al.
Notice of Allowance (Mail Date Dec. 22, 2009) for U.S. Appl. No. 12/028,845, Filing Date U.S. Appl. No. 12/028,845; Confirmation No. 7630.
Ayotte Stephen P.
Daubenspeck Timothy Harrison
Gambino Jeffrey Peter
Muzzy Christopher David
Sauter Wolfgang
International Business Machines - Corporation
Kotulak Richard M.
Schmeiser Olsen & Watts
Tran Long K
LandOfFree
Gap capacitors for monitoring stress in solder balls in flip... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Gap capacitors for monitoring stress in solder balls in flip..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Gap capacitors for monitoring stress in solder balls in flip... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2638816