Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having schottky gate
Reexamination Certificate
2006-05-01
2008-11-25
Lindsay, Jr., Walter L. (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having schottky gate
C438S178000
Reexamination Certificate
active
07456057
ABSTRACT:
A semiconductor-on-insulator structure including first and second layers which are attached to one another either directly or through one or more intermediate layers. The first layer includes a substantially single crystal germanium semiconductor material while the second layer comprises a glass or a glass-ceramic material having a linear coefficient thermal of expansion (25-300° C.) which is within the range of +/−20×10−7/° C. of the linear coefficient thermal of expansion of the germanium first layer.
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Danielson Paul Stephen
Dejneka Matthew John
Gadkaree Kishor Purushottam
Lapp Josef Chauncey
Pinckney Linda Ruth
Corning Incorporated
Ford Kenisha V
Lindsay Jr. Walter L.
Schaeberle Timothy M.
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