Group III-V devices with multiple spacer layers

Details Group III-V devices with multiple spacer layers Group III-V devices with multiple spacer layers

2011-02-22

2011-02-22

Smith, Bradley K (Department: 2894)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

C438S167000, C257S194000

Reexamination Certificate

active

07892902

ABSTRACT:
A group III-V material device has multiple spacer regions above a quantum well channel region. A high-k value gate dielectric is formed on an InGaAs spacer above the quantum well channel region while there are InAlAs spacer regions under contact regions.

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