4. Active solid-state devices (e.g., transistors, solid-state diode
  5. Incoherent light emitter structure
  6. Active layer of indirect band gap semiconductor
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N2 based plasma treatment for enhanced sidewall smoothing...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Active layer of indirect band gap semiconductor
Reexamination Certificate

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Nitride semiconductor device comprising bonded substrate and...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Active layer of indirect band gap semiconductor
Reexamination Certificate

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Nitride semiconductor light emitting device and its manufacturin

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Active layer of indirect band gap semiconductor
Patent

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Nitride-based semiconductor element and method for manufacturing

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Active layer of indirect band gap semiconductor
Patent

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Nitride-based semiconductor light-emitting device

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Active layer of indirect band gap semiconductor
Reexamination Certificate

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Nitride-based VCSEL or light emitting diode with p-n tunnel...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Active layer of indirect band gap semiconductor
Reexamination Certificate

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