Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Active layer of indirect band gap semiconductor
Reexamination Certificate
2011-03-22
2011-03-22
Nhu, David (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
Active layer of indirect band gap semiconductor
C257S350000, C257S288000, C257S701000, C257SE21170, C257SE21051, C257SE21229, C257SE21311, C257SE21267, C257SE21421
Reexamination Certificate
active
07910936
ABSTRACT:
A method of forming a semiconductor device including forming a low-k dielectric material over a substrate, depositing a liner on a portion of the low-k dielectric material, and exposing the liner to a plasma. The method also includes depositing a layer over the liner.
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Ajmera Sameer Kumar
Jin Changming
Smith Patricia Beauregard
Brady III Wade J.
Franz Warren L.
Nhu David
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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