Nitride semiconductor light emitting device and its manufacturin

Details Nitride semiconductor light emitting device and its manufacturin Nitride semiconductor light emitting device and its manufacturin

1998-02-20

2000-09-19

Dutton, Brian

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

Active layer of indirect band gap semiconductor

257 94, 257101, H01L 2715, H01L 3112, H01L 3300

Patent

active

061216348

ABSTRACT:
In a nitride compound semiconductor light emitting device, an In.sub.0.3 Ga.sub.0.7 N/GaN multi-quantum well active layer 105 or an In.sub.0.1 Ga.sub.0.9 N/GaN multi-quantum well adjacent layer 104 is made as a saturable absorptive region so that self-pulsation occurs there. Thus, the device ensures self-pulsation with a high probability with a simple structure, and satisfies requirements for use as an optical head for reading data from an optical disc.

REFERENCES:
patent: 5557115 (1996-09-01), Shakuda
patent: 5852625 (1998-12-01), Takahashi
patent: 5913986 (1999-06-01), Matsuyama
T. Takayama, et al., Appl. Phys. Lett., vol. 69, No. 24, pp. 3656-3658, Dec. 9, 1996, "Small-Astigmatism, Low-Noise, and High-Power Self-Sustained Pulsation Multiple-Quantum-Well Laser Diodes with a Real Refractive Index Guided Self-Aligned Structure".

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