Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Active layer of indirect band gap semiconductor
Patent
1998-08-28
2000-01-18
Meier, Stephen D.
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
Active layer of indirect band gap semiconductor
257103, 257631, H01L 2715, H01L 3112, H01L 31153, H01L 3300, H01L 2358
Patent
active
060159790
ABSTRACT:
Nitride-based semiconductor element comprises a first layer, a mask formed on the first layer and has a plurality of opening portions, a nitride-based compound semiconductor layer formed on the mask, the nitride-based compound semiconductor layer including a first region having threading dislocations produced in such a manner that, in approximately a middle portion between two adjacent ones of the plurality of opening portions in the mask, a plurality of dislocations extend in a vertical direction to a surface of the mask, and a second region which comprises portions other than the middle portions and free from the dislocations, and a desired element structure formed on the semiconductor layer.
REFERENCES:
patent: 5880485 (1999-03-01), Marx et al.
Nakamura et al., Bulletin of Solid State Physics and Applications (Japan Society of Applied Physics), vol. 4, No. 2, May 28, 1998, p. 53.
Nakamura et al., InGaN/GaN/AIGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices, (1997), pp. 1568-1571.
Nakamura et al., InGaN/GaN/AIGaN-based laser with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate, (1998), pp. 211-213.
Nakamura et al., High-power, Long-Lifetime InGaN/GaN/AIGaN-Based Laser Diodes Grown on Pure GaN Substrates, (1998), pp. 309-312.
Akira Sakai, Defect structure in selectively grown GaN films with low threading dislocation density, (1997),pp. 2259-2261.
NAM et al., Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy, (1997), pp. 2638-2640.
Upder et al., News from ISCS in San Diego, The Materials Research Society, (1998), 1 page.
Ishikawa Masayuki
Nunoue Shin-ya
Onomura Masaaki
Sugiura Lisa
Yamamoto Masahiro
Kabushiki Kaisha Toshiba
Meier Stephen D.
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