Nitride-based semiconductor light-emitting device

Details Nitride-based semiconductor light-emitting device Nitride-based semiconductor light-emitting device

2006-12-26

2006-12-26

Kebede, Brook (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

Active layer of indirect band gap semiconductor

C257S200000, C257SE29089

Reexamination Certificate

active

07154123

ABSTRACT:
A nitride-based semiconductor light-emitting device capable of improving light extraction efficiency is provided. This nitride-based semiconductor light-emitting device comprises a first nitride-based semiconductor layer formed on the surface of a conductive substrate, an active layer formed on the first nitride-based semiconductor layer, a second nitride-based semiconductor layer formed on the active layer and a light transmission layer, formed on the second nitride-based semiconductor layer, having a carrier concentration lower than the carrier concentration of the second nitride-based semiconductor layer.

REFERENCES:
patent: 5740192 (1998-04-01), Hatano et al.
patent: 2001/0030328 (2001-10-01), Ishida
patent: 2003/0197169 (2003-10-01), Lee et al.
patent: 9-8403 (1997-01-01), None

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