Transistors fabricated using a reduced cost CMOS process
Transistors for semiconductor device and methods of...
Transistors having a channel region between channel-portion...
Transistors having a channel region between channel-portion...
Transistors having a recessed channel region
Transistors having a scaled channel length and integrated spacer
Transistors having asymmetric strained source/drain portions
Transistors having controlled conductive spacers, uses of such t
Transistors having controlled conductive spacers, uses of such t
Transistors having controlled conductive spacers, uses of...
Transistors having dynamically adjustable characteristics
Transistors having implanted channel layers and methods of...
Transistors having independently adjustable parameters
Transistors of semiconductor devices and methods of...
Transistors with increased mobility in the channel zone and...
Transistors with laterally extended active regions and...
Transistors with multilayered dielectric films
Transistors with stressed channels
Transistors, semiconductor integrated circuit...
Transition metal alloys for use as a gate electrode and...