Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Reexamination Certificate
2007-03-20
2007-03-20
Menz, Doug (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
C257S213000
Reexamination Certificate
active
11202541
ABSTRACT:
Embodiments of a transition metal alloy having an n-type or p-type work function that does not significantly shift at elevated temperature. The disclosed transition metal alloys may be used as, or form a part of, the gate electrode in a transistor. Methods of forming a gate electrode using these transition metal alloys are also disclosed.
REFERENCES:
patent: 4673968 (1987-06-01), Hieber et al.
patent: 5189504 (1993-02-01), Nakayama et al.
patent: 5654242 (1997-08-01), Komatsu
patent: 5817547 (1998-10-01), Eom
patent: 5913111 (1999-06-01), Kataoka et al.
patent: 5965911 (1999-10-01), Joo et al.
patent: 6156630 (2000-12-01), Iyer
patent: 6174809 (2001-01-01), Kang et al.
patent: 6225168 (2001-05-01), Gardner et al.
patent: 6255698 (2001-07-01), Gardner et al.
patent: 6265258 (2001-07-01), Liang et al.
patent: 6268272 (2001-07-01), Jang
patent: 6291282 (2001-09-01), Wilk et al.
patent: 6313033 (2001-11-01), Chiang et al.
patent: 6365450 (2002-04-01), Kim
patent: 6482262 (2002-11-01), Elers et al.
patent: 6495438 (2002-12-01), Shinmura
patent: 6518154 (2003-02-01), Buynoski et al.
patent: 6544876 (2003-04-01), Iyer
patent: 2002/0058374 (2002-05-01), Kim et al.
patent: 2002/0086504 (2002-07-01), Park et al.
patent: 2003/0022457 (2003-01-01), Gutsche et al.
patent: 2003/0031807 (2003-02-01), Elers et al.
patent: 2003/0129793 (2003-07-01), Chau et al.
patent: 2003/0129795 (2003-07-01), Chau et al.
patent: 2004/0208994 (2004-10-01), Harkonen et al.
patent: 0 623 963 (1994-05-01), None
patent: 0 899 784 (1998-08-01), None
patent: 1 124 262 (2001-02-01), None
patent: WO 01/29280 (2001-04-01), None
patent: WO 2004/061915 (2004-07-01), None
Mackie et al: Transition metal carbide field emitters for field-emitter array devices and high current applications, Journal of Vacuum Science & tech., vol. 17, No. 2, Mar. 1999, pp. 613-619, XP012007426.
Kobayashi: “First-principles study of the electronic properties of transition metal nitride surfaces”, Database Compendex ′Online! Engineering Info., Inc., NY, NY, US XP002304085.
“First-principles study of the electronic properties of transition metal nitride surfaces”, Surface Science Nov. 1, 2001, vol. 493, No. 1-3, pp. 665-670 XP002304077.
Park et al: “Robust ternary metal gate electrodes for dual gate CMOS devices”, Database Compendex ′Online! Engineering Info., Inc., NY, NY<US XP 002304080.
“Robust ternary metal gate electrodes for dual gate CMOS devices” Technical Digest—International Electron Devices Meeting 2001, pp. 671-674, XP002310244.
Yoon Choi et al: “Effect of aluminium addition on the combustion reaction of titanium and carbon to form TiC”, Database Inspec ′Online! The Institution of Electrical Engineers, Stevenage, GB, XP002304081.
Yoon Choi et al: “Effect of aluminum addition on the combustion reaction of titanium and carbon to form TiC”, Journal of Materials Science, vol. 28, No. 24, 1993, pp. 6669-6675 XP00909256.
Pietzka et al: “Summary of constitutional data on the A1-C-Ti system” Journal of Phase Equilibria, vol. 15, No. 4 1994, pp. 392-400, XP009039302.
Samaveda, et al: “Evaluation of candidate metals for dual-metal gate CMOS with Hf02 gate dielectric” Database Inspec ′Online! The Institution of Electrical Engineers, Stavenage, GB; XP002304079.
Silicon Materials-Processing, Characterization and reliability. Symposium Apr. 1-5, 2002, San Francisco, CA, USA, pp. 85-90, XP009039269.
Tzenov et al: “Synthesis and characterization of Ti3A1C2” Database Inspec ′Online! The Institution of Electrical Engineers, Stevenage, GB; XP002304082.
Journal of the American Ceramic Society USA, vol. 83, No. 4, 2000. pp. 825-832, XP002310245.
Goryachev et al: “Effect of electrospark alloying of the surface of molybdenum and niobium on thermionic emission” Database Compendex ′Online! NY, NY, US; XP 002310246.
Goryachev et al: “Effect of electrospark alloying of the surface of molybdenum and niobium on thermionic emission”, Sov Surf Eng Appl electrochem 1987, No. 4, pp. 11-16. XP009039191.
International Preliminary Report on Patentability, PCT Application No. PCT/US2004/025977, filed Aug. 11, 2004, 9 pages.
Baxter Nathan
Chau Robert S.
Doczy Mark
Harkonen Kari
Lang Teemu
Intel Corporation
Menz Doug
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