Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-01-31
2008-10-21
Luu, Chuong A. (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S384000, C257S369000, C257S388000
Reexamination Certificate
active
07439596
ABSTRACT:
The present invention discloses a transistor for a semiconductor device capable of preventing the generation of a depletion capacitance in a gate pattern due to the diffusion of impurity ions. The present invention also discloses a method of fabricating the transistor.
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Kim Hyun-Suk
Lee Ho
Lee Seung-Hwan
Park Moon-Han
Rhee Hwa-Sung
Luu Chuong A.
Samsung Electronics Co Ltd.
Volentine & Whitt, PLLC.
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