Transistors having a recessed channel region

Details Transistors having a recessed channel region Transistors having a recessed channel region

2006-11-28

2006-11-28

Quach, T. N. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S332000, C257S334000

Reexamination Certificate

active

07141851

ABSTRACT:
A transistor includes a substrate and a device isolation layer that is formed on the substrate to define an active region. A gate pattern crosses over the active region. A gate insulation layer is interposed between the gate pattern and the active region. Source and drain regions are formed in the active region adjacent to respective sides of the gate pattern. A channel region is disposed in the active region between the source and drain regions. The channel region includes a recessed portion.

REFERENCES:
patent: 5747356 (1998-05-01), Lee et al.
patent: 6222230 (2001-04-01), Gardner et al.
patent: 6358800 (2002-03-01), Tseng
patent: 6465842 (2002-10-01), Nishinohara
patent: 6566198 (2003-05-01), Park et al.
patent: 6716046 (2004-04-01), Mistry
patent: 6815297 (2004-11-01), Krivokapic et al.

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