Method of forming a trench capacitor using a rutile dielectric m

Details Method of forming a trench capacitor using a rutile dielectric m Method of forming a trench capacitor using a rutile dielectric m

1998-11-17

2000-12-05

Hardy, David

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438239, 438240, 438243, 438253, 438386, H01L 218242

Patent

active

061566063

ABSTRACT:
A method of forming semiconductor devices in accordance with the present invention includes the steps of providing a deep trench in a substrate, the deep trench having a lower portion and forming a dielectric layer in the deep trench by lining the lower portion of the deep trench with a dielectric layer, the dielectric layer including titanium. A semiconductor device includes a substrate having a trench formed therein, a storage node formed in the trench and capacitively coupled to the substrate and a dielectric layer formed in the trench between the storage node and the substrate, the dielectric layer lining a lower portion of the trench wherein the dielectric layer includes titanium oxide.

REFERENCES:
patent: 4200474 (1980-04-01), Morris
patent: 5202152 (1993-04-01), Giannelis et al.
patent: 5357132 (1994-10-01), Turner
patent: 5587039 (1996-12-01), Salimian
patent: 5696017 (1997-12-01), Ueno

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