Method of fabricating a narrow polycide gate structure on an ult

Details Method of fabricating a narrow polycide gate structure on an ult Method of fabricating a narrow polycide gate structure on an ult

1997-05-01

1999-01-05

Booth, Richard

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438592, H01L 21265, H01L 218234

Patent

active

058562273

ABSTRACT:
A process for creating a MOSFET device, with a narrow polycide gate structure, on an ultra-thin gate oxide, has been developed. The process features partially etching of a polysilicon layer, used in the polycide structure, to a level in which only a thin residual layer of the polysilicon remains. After formation of a lightly doped source and drain region, formed via ion implantation through the thin residual polysilicon layer, an oxidation is performed to convert the thin residual polysilicon layer, to an oxide layer. The ability to complete the patterning of the polysilicon layer using oxidation procedures, avoids the risk of RIE trenching or pitting, that can occur if the polysilicon layer is patterned using only RIE procedures.

REFERENCES:
patent: 4837180 (1989-06-01), Chao
patent: 4906589 (1990-03-01), Chao
patent: 4963504 (1990-10-01), Huang
patent: 5032535 (1991-07-01), Kamjo et al.
patent: 5202277 (1993-04-01), Kameyama et al.
patent: 5585295 (1996-12-01), Wu
patent: 5672544 (1997-09-01), Pan
patent: 5677217 (1997-10-01), Tseng

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