Removable pumping channel liners within a chemical vapor deposit

Coating apparatus – Gas or vapor deposition

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118725, 118723E, C23C 1600

Patent

active

059649470

ABSTRACT:
A substrate processing chamber, particularly a chemical vapor deposition (CVD) chamber used both for thermal deposition of a conductive material and a subsequently performed plasma process. The invention reduces thermal deposition of the conductive material in a pumping channel exhausting the chamber. The pumping channel is lined with various elements, some of which are electrically floating and which are designed so that conductive material deposited on these elements do not deleteriously affect a plasma generated for processing the wafer.

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