Coating apparatus – Gas or vapor deposition
Patent
1997-05-16
1999-10-12
Utech, Benjamin
Coating apparatus
Gas or vapor deposition
118725, 118723E, C23C 1600
Patent
active
059649470
ABSTRACT:
A substrate processing chamber, particularly a chemical vapor deposition (CVD) chamber used both for thermal deposition of a conductive material and a subsequently performed plasma process. The invention reduces thermal deposition of the conductive material in a pumping channel exhausting the chamber. The pumping channel is lined with various elements, some of which are electrically floating and which are designed so that conductive material deposited on these elements do not deleteriously affect a plasma generated for processing the wafer.
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Chang Mei
Danek Michal
Dornfest Charles
Luo Lee
Sajoto Talex
Applied Materials Inc.
Guenzer Charles S.
Lund Jeffrie R.
Utech Benjamin
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