Integrating a first contact structure in a gate last process

Details Integrating a first contact structure in a gate last process Integrating a first contact structure in a gate last process

2008-12-22

2011-10-11

Pham, Hoai V (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S407000, C257SE27060, C257SE27062

Reexamination Certificate

active

08035165

ABSTRACT:
A semiconductor device is provided which includes a semiconductor substrate, a transistor formed on the substrate, the transistor having a gate stack including a metal gate and high-k gate dielectric and a dual first contact formed on the substrate. The dual first contact includes a first contact feature, a second contact feature overlying the first contact feature, and a metal barrier formed on sidewalls and bottom of the second contact feature, the metal barrier layer coupling the first contact feature to the second contact feature.

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Chinese Patent Office, Office Action dated Jan. 10, 2011, Application No. 200910170465.0, 4 pages.

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