Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2006-04-28
2009-06-02
Norton, Nadine (Department: 1792)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S719000, C438S724000, C438S725000, C438S729000, C438S736000, C216S037000, C216S067000, C216S089000
Reexamination Certificate
active
07541292
ABSTRACT:
A plasma etch process for etching high aspect ratio openings in a dielectric film on a workpiece is carried out in a reactor having a ceiling electrode overlying the workpiece and an electrostatic chuck supporting the workpiece. The process includes injecting a first polymerizing etch process gas through a radially inward one of plural concentric gas injection zones in the ceiling electrode and injecting a second polymerizing etch process gas through a radially outward one of the plural concentric gas injection zones in the ceiling electrode, the compositions of the first and second process gases having first and second carbon-to-fluorine ratios that differ from one another. The process further includes evacuating gas from the reactor through a pumping annulus surrounding an edge of the workpiece, and etching the high aspect ratio openings in the dielectric film with etch species derived from the etch process gas while depositing a polymer derived from the etch process gas onto the workpiece, by generating a plasma in the reactor.
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Shin-ichi Imai, Journal of Vacuum Science and Technology, B20(4), Jul./Aug. (2002), pp. 1482-1488.
Bera Kallol
Brillhart Paul Lukas
Doan Kenny L.
Geoffrion Bruno
Gold Ezra Robert
Angadi Maki
Applied Materials Inc.
Law Office of Robert M. Wallace
Norton Nadine
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