Methods of post-contact back end of the line through-hole...

Details Methods of post-contact back end of the line through-hole... Methods of post-contact back end of the line through-hole...

2007-06-20

2009-11-10

Lebentritt, Michael S (Department: 2829)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S597000, C438S637000, C438S638000, C438S699000, C438S702000, C257SE21252, C257SE21256, C257SE21277, C257SE21538, C257SE21582, C257SE27088, C257SE27112, C257SE23011, C257SE23013, C257SE25013

Reexamination Certificate

active

07615480

ABSTRACT:
Presented are methods of fabricating three-dimensional integrated circuits that include post-contact back end of line through-hole via integration for the three-dimensional integrated circuits. In one embodiment, the method comprises forming metal plug contacts through a hard mask and a premetal dielectric to transistors in the semiconductor. The method also includes etching a hole for a through-hole via through the hard mask to the semiconductor using a patterned photoresist process, removing the patterned photoresist and using a hard mask process to etch the hole to an amount into the semiconductor. The method further includes depositing a dielectric liner to isolate the hole from the semiconductor, depositing a gapfill metal to fill the hole, and planarizing the surface of the substrate to the hard mask. Another aspect of the present invention includes three-dimensional integrated circuits fabricated according to methods of the present invention.

REFERENCES:
patent: 4939568 (1990-07-01), Kato et al.
patent: 5877034 (1999-03-01), Ramm et al.
patent: 5879980 (1999-03-01), Selcuk et al.
patent: 5998292 (1999-12-01), Black et al.
patent: 6043163 (2000-03-01), Tsai et al.
patent: 6103455 (2000-08-01), Huang et al.
patent: 6187668 (2001-02-01), Wu et al.
patent: 6207494 (2001-03-01), Graimann et al.
patent: 6251726 (2001-06-01), Huang
patent: 6323123 (2001-11-01), Liu et al.
patent: 6448174 (2002-09-01), Ramm
patent: 6503840 (2003-01-01), Catabay et al.
patent: 6690054 (2004-02-01), Lin et al.
patent: 6806142 (2004-10-01), Cheng et al.
patent: 7018781 (2006-03-01), Frohlich et al.
patent: 7105882 (2006-09-01), Inoue et al.
patent: 7148565 (2006-12-01), Kim et al.
patent: 7338896 (2008-03-01), Vanhaelemeersch et al.
patent: 7345343 (2008-03-01), Phan et al.
patent: 2002/0182819 (2002-12-01), Schrems et al.
patent: 2005/0269665 (2005-12-01), Wylie et al.
patent: 2006/0131655 (2006-06-01), Kunnen
patent: 2006/0223301 (2006-10-01), Vanhaelemeersch et al.
patent: 2008/0132066 (2008-06-01), Phan et al.
patent: 2009/0065904 (2009-03-01), Wang
patent: 2009/0152602 (2009-06-01), Akiyama
Three-Dimensional Integrated Circuits, A.W. Topol, et al.,IBM Journal of Research and Development, vol. 50, No. 4/5 (Jul./Sep. 2006).
U.S. Appl. No. 11/641,364, filed Dec. 18, 2006.
U.S. Appl. No. 11/641,361, filed Dec. 18, 2006.
U.S. Appl. No. 11/821,051, filed Jun. 20, 2007.
U.S. Appl. No. 11/820,810, filed Jun. 20, 2007.

Affiliated with

Also associated with

Rating

Methods of post-contact back end of the line through-hole... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods of post-contact back end of the line through-hole..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of post-contact back end of the line through-hole... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4092080