Silicide formation with a pre-amorphous implant

Details Silicide formation with a pre-amorphous implant Silicide formation with a pre-amorphous implant

2006-09-19

2009-12-01

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21619

Reexamination Certificate

active

07625801

ABSTRACT:
A method for forming a semiconductor structure includes providing a semiconductor substrate, forming a gate stack on the semiconductor substrate, forming a silicon-containing compound stressor adjacent the gate stack, implanting non-siliciding ions into the silicon-containing compound stressor to amorphize an upper portion of the silicon-containing compound stressor, forming a metal layer on the silicon-containing compound stressor while the upper portion of the SiGe stressor is amorphous, and annealing to react the metal layer with the silicon-containing compound stressor to form a silicide region. The silicon-containing compound stressor includes SiGe or SiC.

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