Etching a substrate: processes – Gas phase etching of substrate – Application of energy to the gaseous etchant or to the...
Reexamination Certificate
2007-10-30
2007-10-30
Norton, Nadine (Department: 1765)
Etching a substrate: processes
Gas phase etching of substrate
Application of energy to the gaseous etchant or to the...
C438S687000, C438S640000
Reexamination Certificate
active
10888626
ABSTRACT:
Methods and apparatus are provided for processing a substrate with a hermetic dielectric layer. In one aspect, the invention provides a method for processing a substrate including providing the substrate to a processing chamber, introducing a processing gas comprising a reducing agent, an oxygen containing compound, and an organosilicon compound, into the processing chamber, generating a plasma from a dual frequency RF power source, and depositing a dielectric material comprising silicon, carbon, and oxygen. The dielectric material may be used as an etch stop, an anti-reflective coating, or a passivation layer.
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Kim Bok Hoen
Lakshmanan Annamalai
Lee Albert
Lee Ju-Hyung
Angadi Maki
Applied Materials Inc.
Norton Nadine
Patterson & Sheridan
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