Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-06-05
2007-06-05
Nguyen, Thanh (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S637000, C438S638000
Reexamination Certificate
active
10197936
ABSTRACT:
A method of forming a dual damascene structure on a substrate having a dielectric layer already formed thereon. In one embodiment the method includes depositing a first hard mask layer over the dielectric layer; depositing a second hard mask layer on the first hard mask layer; depositing a third hard mask layer on the second hard mask layer and completing formation of the dual damascene structure by etching a metal wiring pattern and a via pattern in the dielectric layer and filling the etched metal wiring pattern and via pattern with a conductive material. In one particular embodiment the second hard mask layer is an amorphous carbon layer and the third hard mask layer is a silicon-containing material.
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Armacost Michael D.
Bekiaris Nikolaos
Naik Mehul B.
Weidman Timothy
Applied Materials Inc.
Nguyen Thanh
Townsend & Townsend & Crew LLP
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