Spacer for a split gate flash memory cell and a memory cell...

Details Spacer for a split gate flash memory cell and a memory cell... Spacer for a split gate flash memory cell and a memory cell...

2007-04-10

2007-04-10

Lee, Calvin (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S317000

Reexamination Certificate

active

10775290

ABSTRACT:
A spacer, a split gate flash memory cell, and related method of forming the same. In one aspect, a composite spacer includes a first spacer insulating layer having a first deposition distribution that varies as a function of a location on a substrate. The composite spacer also includes a second spacer insulating layer having a second deposition distribution that varies in substantial opposition to the first deposition distribution. In another aspect, a composite spacer includes a first spacer insulating layer having a substantially uniform deposition distribution across a surface thereof. The composite spacer also includes a second spacer insulating layer having a varying deposition distribution with a thinner composition in selected regions of the memory cell. In another aspect, a coupling spacer provides for a conductive layer that extends between a floating gate and a substrate insulating layer adjacent a source recessed into the substrate of the memory cell.

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patent: 2005/0136676 (2005-06-01), Liu

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