Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-03-20
2007-03-20
Whitehead, Jr., Carl (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
Reexamination Certificate
active
10726005
ABSTRACT:
A method for manufacturing a semiconductor substrate of a first concentration type is described, which comprises at least a buried insulating cavity, comprising the following steps:forming on the semiconductor substrate a plurality of trenches,forming a surface layer on the semiconductor substrate in order to close superficially the plurality of trenches forming in the meantime at least a buried cavity in correspondence with the surface-distal end of the trenches.
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Coffa Salvatore
La Magna Luigi
Lorenti Simona
Renna Crocifisso Marco Antonio
Graybeal Jackson Haley LLP
Harrison Monica
Jorgenson Lisa K.
Jr. Carl Whitehead
Rusyn Paul F.
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