Method of manufacturing transistor having recessed channel

Details Method of manufacturing transistor having recessed channel Method of manufacturing transistor having recessed channel

2006-10-24

2006-10-24

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S430000, C438S589000, C257SE21429

Reexamination Certificate

active

07125774

ABSTRACT:
A method of fabricating a transistor with a recessed channel is provided. The method includes forming trenches for a recessed channel on a semiconductor substrate, depositing an isolation layer on the semiconductor substrate on which the trenches are formed, depositing a gate dielectric layer on the semiconductor substrate so that the gate dielectric layer can be extended to bottoms and sidewalls of the trenches, forming gates to fill the trenches, and forming source and drain regions in the semiconductor substrate adjacent to the gates.

REFERENCES:
patent: 5998835 (1999-12-01), Furukawa et al.
patent: 6238967 (2001-05-01), Shiho et al.
patent: 6368911 (2002-04-01), Fu
patent: 6448139 (2002-09-01), Ito et al.
patent: 6828210 (2004-12-01), Kim et al.
patent: 2002-2298 (2002-01-01), None
patent: 2002-0032934 (2002-05-01), None
patent: 10-0346617 (2002-07-01), None
English Language of Abstract of Korean Patent Publication No. 2002-0032934.
English Language of Abstract of Korean Patent Publication No. 10-0346617.
English language abstract of Korean Application No. 2002-2298.

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