Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-05-30
2006-05-30
Tran, Mai-Huong (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S202000, C438S205000, C438S581000, C438S630000
Reexamination Certificate
active
07052946
ABSTRACT:
A strained channel MOSFET device with improved charge mobility and method for forming the same, the method including providing a first gate with a first semiconductor conductive type and second gate with a semiconductor conductive type on a substrate; forming a first strained layer with a first type of stress on said first gate; and, forming a second strained layer with a second type of stress on said second gate.
REFERENCES:
patent: 6855982 (2005-02-01), Xiang et al.
patent: 6890808 (2005-05-01), Chidambarrao et al.
Chen Chia-Lin
Chen Chien-Hao
Chen Shih-Chang
Hsu Ju-Wang
Lee Tze-Liang
Taiwan Semiconductor Manufacturing Co. Ltd.
Tran Mai-Huong
Tung & Assoc.
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