Process to make high-k transistor dielectrics

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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Reexamination Certificate

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07087480

ABSTRACT:
A method of reducing impurities in a high-k dielectric layer comprising the following steps. A substrate is provided. A high-k dielectric layer having impurities is formed over the substrate. The high-k dielectric layer being formed by an MOCVD or an ALCVD process. The high-k dielectric layer is annealed to reduce the impurities within the high-k dielectric layer.

REFERENCES:
patent: 5904517 (1999-05-01), Gardner et al.
patent: 6008095 (1999-12-01), Gardner et al.
patent: 6090723 (2000-07-01), Thakur et al.
patent: 6114228 (2000-09-01), Gardner et al.
patent: 6153477 (2000-11-01), Gardner et al.
patent: 6271094 (2001-08-01), Boyd et al.
patent: 6294420 (2001-09-01), Tsu et al.
patent: 6455330 (2002-09-01), Yao et al.
patent: 6461931 (2002-10-01), Eldridge
patent: 6462360 (2002-10-01), Higgins et al.
patent: 6472276 (2002-10-01), Hilt et al.
patent: 6472694 (2002-10-01), Wilson et al.
patent: 6498358 (2002-12-01), Lach et al.
patent: 6511876 (2003-01-01), Buchanan et al.
patent: 6656764 (2003-12-01), Wang et al.
patent: 6716707 (2004-04-01), Brask et al.
patent: 6764927 (2004-07-01), Yao et al.
patent: 6899858 (2005-05-01), Zhuang et al.
patent: 6914313 (2005-07-01), Wang et al.
patent: 2003/0096473 (2003-05-01), Shih et al.
patent: 2004/0038538 (2004-02-01), Ho et al.
patent: 2004/0087075 (2004-05-01), Wang et al.
patent: 2004/0180523 (2004-09-01), Brask et al.
patent: 2004/0222474 (2004-11-01), Chau et al.
patent: 2005/0023576 (2005-02-01), Lee et al.
patent: 2005/0074978 (2005-04-01), Wang et al.
patent: 2005/0084610 (2005-04-01), Selitser
patent: 2005/0124109 (2005-06-01), Quevedo-Lopez et al.
patent: 2005/0132549 (2005-06-01), Shih et al.
patent: 2005/0158974 (2005-07-01), Chau et al.
patent: 2005/0167777 (2005-08-01), Lee
patent: 2005/0196927 (2005-09-01), Wang et al.

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