Etching a substrate: processes – Gas phase etching of substrate – With measuring – testing – or inspecting
Reexamination Certificate
2006-04-25
2006-04-25
Ahmed, Shamim (Department: 1765)
Etching a substrate: processes
Gas phase etching of substrate
With measuring, testing, or inspecting
C216S059000, C438S014000, C438S016000
Reexamination Certificate
active
07033518
ABSTRACT:
A method of etching multi-layer films, the method including: (1) etching a plurality of layers according to etching parameters, (2) determining a plurality of optical characteristics each associated with one of the plurality of layers and determined during the etching of the associated one of the plurality of layers, and (3) determining dynamic etch progressions each based on one of the plurality of optical characteristics that is associated with a particular one of the plurality of layers undergoing the etching.
REFERENCES:
patent: 6300251 (2001-10-01), Pradeep et al.
patent: 6498045 (2002-12-01), Gu
patent: 6712927 (2004-03-01), Grimbergen et al.
patent: 6755932 (2004-06-01), Masuda et al.
Chen Chao-Cheng
Hsu Miao-Ju
Tao Hun-Jan
Yang Hui Ou
Ahmed Shamim
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
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