Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-06-13
2006-06-13
Lindsay, Jr., Walter L. (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S263000, C438S624000
Reexamination Certificate
active
07060554
ABSTRACT:
A Si-rich silicon oxide layer having reduced UV transmission is deposited by PECVD, on an interlayer dielectric, prior to metallization, thereby reducing Vt. Embodiments include depositing a UV opaque Si-rich silicon oxide layer having an R.I. of 1.7 to 2.0.
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Gao Pei Yuan
Kamal Tazrien
Ngo Minh Van
Ramsbey Mark
Advanced Micro Devices , Inc.
Lindsay Jr. Walter L.
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