Method of manufacturing semiconductor device with contact...

Details Method of manufacturing semiconductor device with contact... Method of manufacturing semiconductor device with contact...

2005-08-16

2005-08-16

Tsai, H. Jey (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S396000

Reexamination Certificate

active

06929999

ABSTRACT:
A method of manufacturing a semiconductor device with contact bodies that extend in the direction of bit lines to contact storage nodes includes forming band-type openings by selectively etching an insulating layer that covers the bit lines. The band-type openings extend in a lengthwise direction of the gate lines to expose the first contact pads and have portions that protrude in a lengthwise direction of the bit lines. The method also includes forming a conductive layer on the insulating layer that fills the band-type openings and is electrically connected to the first contact pads. The conductive layer is then patterned to separate the conductive layer into individual storage node contact bodies that extend in a lengthwise direction of the bit lines. Storgage nodes are then formed on the storage node contact bodies.

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patent: 2 392 311 (2004-02-01), None

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