Method for forming a ferroelectric capacitor device

Details Method for forming a ferroelectric capacitor device Method for forming a ferroelectric capacitor device

2005-08-02

2005-08-02

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S240000

Reexamination Certificate

active

06924156

ABSTRACT:
A ferroelectric capacitor device, such as an FeRAM device is formed by forming a substrate extending in a first plane and comprising a number of layers of material, forming a hard mask layer on the substrate and forming a first layer of a first material on the hard mask layer. The hard mask shape is then defined by etching the hard mask layer. A second layer of the first material is deposited on the etched hard mask layer. The deposited second layer has one or more side surfaces extending substantially perpendicular to the plane of the substrate. The second layer and the number of layers forming the substrate are then etched to shape the ferroelectric capacitor device.

REFERENCES:
patent: 5972722 (1999-10-01), Visokay et al.
patent: 6207496 (2001-03-01), Kang
patent: 6211034 (2001-04-01), Visokay et al.
patent: 6465321 (2002-10-01), Shin et al.
patent: 6762064 (2004-07-01), Zhuang et al.
patent: 6780708 (2004-08-01), Kinoshita et al.
patent: 2003/0082916 (2003-05-01), Chung et al.
patent: 2003/0119251 (2003-06-01), Aggarwal et al.
“Sputter-Resistant Mask Structure and Process”, IBM Technical Disclosure Bulletin, IBM Corp., New York, USA, 33(3B):379-381, Aug. 1990.

Affiliated with

Also associated with

Rating

Method for forming a ferroelectric capacitor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming a ferroelectric capacitor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming a ferroelectric capacitor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3513697