Semiconductor device having landing pad and fabrication...

Details Semiconductor device having landing pad and fabrication... Semiconductor device having landing pad and fabrication...

2005-08-09

2005-08-09

Pham, Hoai (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S596000, C438S597000

Reexamination Certificate

active

06927119

ABSTRACT:
A semiconductor device can be provided comprising a semiconductor substrate having an upper surface. A plurality of adjacent line patterns are formed on the upper surface of the semiconductor substrate. Each line pattern includes a line having a capping layer pattern stacked thereon. A material layer covers the upper surface of the semiconductor substrate having the line patterns. A pad contact hole is located between the line patterns within a region of the material layer. The pad contact hole includes a lower opening between the line patterns and an upper opening located above the lower opening. A barrier layer is formed on a side wall defining the upper opening. A landing pad substantially fills the lower opening and the upper opening defined by the barrier layer.

REFERENCES:
patent: 5480814 (1996-01-01), Wuu et al.
patent: 5688713 (1997-11-01), Linliu et al.
patent: 5728595 (1998-03-01), Fukase
patent: 6117757 (2000-09-01), Wang et al.
patent: 2002/0001936 (2002-01-01), Terauchi et al.

Affiliated with

Also associated with

Rating

Semiconductor device having landing pad and fabrication... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device having landing pad and fabrication..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having landing pad and fabrication... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3505861