Method for integration of silicide contacts and silicide...

Details Method for integration of silicide contacts and silicide... Method for integration of silicide contacts and silicide...

2005-08-09

2005-08-09

Pert, Evan (Department: 2826)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

Reexamination Certificate

active

06927117

ABSTRACT:
A CMOS silicide metal integration scheme that allows for the incorporation of silicide contacts (S/D and gates) and metal silicide gates using a self-aligned process (salicide) as well as one or more lithography steps is provided. The integration scheme of the present invention minimizes the complexity and cost associated with fabricating a CMOS structure containing silicide contacts and silicide gate metals.

REFERENCES:
patent: 4780429 (1988-10-01), Roche et al.
patent: 4908332 (1990-03-01), Wu
patent: 5874769 (1999-02-01), Chan et al.
patent: 5953612 (1999-09-01), Lin et al.
patent: 5966597 (1999-10-01), Wright
patent: 6074921 (2000-06-01), Lin
patent: 6093628 (2000-07-01), Lim et al.
patent: 6124189 (2000-09-01), Watanabe et al.
patent: 6136705 (2000-10-01), Blair
patent: 6143613 (2000-11-01), Lin
patent: 6207543 (2001-03-01), Harvey et al.
patent: 6236094 (2001-05-01), Wright
patent: 6326251 (2001-12-01), Gardner et al.
patent: 6562718 (2003-05-01), Xiang et al.
patent: 2004/0121548 (2004-06-01), Fishburn et al.
patent: 2004/0142546 (2004-07-01), Kudo et al.
patent: 2005/0009279 (2005-01-01), Fishburn et al.
patent: 2005/0009280 (2005-01-01), Fishburn et al.
patent: 2005/0064646 (2005-03-01), Chidambarrao et al.
patent: 000991114 (1999-07-01), None

Affiliated with

Also associated with

Rating

Method for integration of silicide contacts and silicide... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for integration of silicide contacts and silicide..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for integration of silicide contacts and silicide... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3464524