Method of manufacturing a semiconductor memory with...

Details Method of manufacturing a semiconductor memory with... Method of manufacturing a semiconductor memory with...

2005-04-26

2005-04-26

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S297000, C257S300000

Reexamination Certificate

active

06884681

ABSTRACT:
A method for manufacturing a MirrorBit® Flash memory includes providing a semiconductor substrate and successively depositing a first insulating layer, a charge-trapping layer, and a second insulating layer. First and second bitlines are implanted and wordlines are formed before completing the memory. Spacers are formed between the wordlines and an inter-layer dielectric layer is formed over the wordlines. One or more of the second insulating layer, wordlines, spacers, and inter-layer dielectric layers are deuterated, replacing hydrogen bonds with deuterium, thus improving data retention and substantially reducing charge loss.

REFERENCES:
patent: 6670241 (2003-12-01), Kamal et al.
patent: 6677213 (2004-01-01), Ramkumar et al.
patent: 6740605 (2004-05-01), Shiraiwa et al.

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